Principal Microwave Semiconductor Device Modeling Engineer

Principal/ Sr Principal Microwave Semiconductor Device Modeling Engineer An exciting opportunity currently exists for a semiconductor device modeling engineer to join our fast-paced microelectronics group. Raytheon?s Microelectronics Engineering & Technology (MET) Department develops, designs, and manufactures compound semiconductor devices, millimeter/microwave integrated circuits, and modules for defense and commercial applications. Job Description As a Principal device modeling engineer working with Raytheon?s GaAs and GaN technologies you will be responsible for the generation of active and passive models for products being developed in our III-V semiconductor foundry. These models will then be used by Raytheon?s MMIC Design team to create Monolithic Microwave Integrated Circuits (MMICs) for use in both commercial and defense electronic systems. Responsibilities will include the following: Design and layout of device modeling test structures and chips Evaluation, use, and support of measurement and parameter extraction hardware and software Definition and execution of device characterization test plans including static & pulsed I-V, C-V, CW & pulsed bias S-Parameter, load/source-pull, TOI, and noise measurements Analyzing parametric test data, collecting and analyzing modeling device data, and extracting device models Developing advanced device model formulations and model extraction algorithms Releasing models into MMIC Process Design Kits (PDKs) in Keysight ADS, and publishing device model documentation and foundry design manuals Assisting device and process engineers in analyzing and understanding the detailed performance of various semiconductor active and passive devices through direct measurement and/or TCAD simulation Assisting EDA engineers in developing and testing MMIC PDKs in Keysight ADS Work with MMIC Design Team to understand model limitations and opportunities for improvement Required Skills Minimum 8 years of experience in compound semiconductor HEMT modeling Hands-on experience with compound semiconductor device characterization (measurement setup and execution) such as static & pulsed I-V, C-V, CW & pulsed bias S-Parameter, load/source-pull, TOI, and noise measurements Extensive hands-on experience with high-frequency (microwave/millimeter wave) and large-signal/high power test equipment such as Keysight or Anteverta NVNAs Experience using statistical data analysis tools such as MATLAB, JMP or Excel Experience with scripting languages in a Linux environment Desired Skills The ideal candidate will have an extensive background in III-V compound semiconductors as well as a thorough knowledge of the entire model development process including test structure design, parameter extraction, model validation, and preparation of model review packages. Experience with: Semiconductor device physics concepts with emphasis on compound semiconductor HEMTs Basic network theory Lumped element equivalent-circuit models for high-frequency transistor devices Non-linear compact model parameter extraction and validation techniques Verilog-A behavioral modeling language and its use for compact model development including direct experience developing advanced device model formulations and model extraction algorithms Excellent communication skills Experience with multi-physics simulations including electromagnetics and thermal Strong working knowledge of power amplifiers, low-noise amplifiers, and related circuits Thorough understanding of III-V integrated circuit manufacturing processes and concepts Direct experience with setup/development/use of Agilent IC-CAP, other commercial, and/or custom measurement and parameter extraction software Experience with transistor models such as Angelov, EEHEMT, BSIM4, PSP, etc. Experience with a wide range of semiconductor device technologies including Compound Semiconductor HEMTs and HBTs, CMOS/RFCMOS and SiGe BiCMOS Experience with Perl/Python/etc. scripting languages Experience with project management including project planning, task break down, milestone scheduling, etc. Working knowledge of Keysight ADS including PDK infrastructure Ability to obtain a Security Clearance Required Education BS in Electrical Engineering or Applied Physics or other related Engineering discipline. MS degree preferred. This position can be a Salary Grade E05 or E06 based on the candidate?s qualifications as they relate to the skills, experience and responsibility requirements for the position. KEYWORDS: HEMT, modeling, semiconductor, device characterization, microwave, millimeter wave, Keysight, MatLab, Linux, electromagnetics, thermal, integrated circuit manufacturing, GaN, GaAs, Verilog-A, equivalent-circuit models 86973 7c8b6fccfc02468dbcbcd3a5a3a1910a

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